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Ga - As Tunnel - Diode 3I 306 SH ( 3И306Ж )
Verfügbarkeit: 
geringe Stückzahl
geringe Stückzahl2,50€
eine Ga - As Tunnel - Diode 3I 306 SH (J)
( 3И306Ж ) aus russischer Produktion.
Die Daten:
IP - Peak Point Current
VP - Peak Point Voltage
CT - Valley Point Terminal Capacitance
VPP - Projected Peak-Point Voltage
IP/IV - Peak to Valley Current Ratio
IFS - Forward Current Switching Mode
IFC - Forward Current Constant Mode
IR - Reverse Current
TE - Environment Temperature
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Maximal parameters |
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Average parameters |
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TE |
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Т=25°C |
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Т=25°C |
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IP |
VP |
CT |
VPP |
rп. |
IP/IV |
IFS |
IFC |
IR |
°C |
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mА |
mV |
pF |
mV |
Ohm |
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mА |
mА |
mА |
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5 |
170 |
15 |
850 |
- |
8 |
2 |
2 |
10 |
100 |