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Ga - As Tunnel - Diode AI 402 G

Ga - As Tunnel - Diode AI 402 G

Verfügbarkeit: geringe Stückzahl

4,00€

eine  Ga - As Tunnel - Diode  AI 402 G

( АИ402Г )   aus russischer Produktion.

Die Daten:

IP        - Peak Point Current
VP       - Peak Point Voltage
CT       - Valley Point Terminal Capacitance
VPP     - Projected Peak-Point Voltage
RD      Differential Resistance
IP/IV    - Peak to Valley Current Ratio
IR         - Reverse Current
TE        - Environment Temperature

 

 

Maximal parameters

 

 

 

Average parameters

 

 

Тk.мах

 

 

Т=25°C

 

 

 

Т=25°C

 

 

п.)

IP

VP

СT

Ld

RD.

Ip./Iv

VF

прi

IR.

°C

(DIp)

 

 

 

 

 

 

 

 

 

mV

pF

nGn

Ohm

 

mV

mkА

 

 0,1

-600

< 8

 - 

 -  -

  -

0,05

1

85