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Ga - As Tunnel - Diode AI 402 E
Verfügbarkeit: 
geringe Stückzahl
geringe Stückzahl4,50€
eine Ga - As Tunnel - Diode AI 402 E
( АИ402E ) aus russischer Produktion.
Die Daten:
IP - Peak Point Current
VP - Peak Point Voltage
CT - Valley Point Terminal Capacitance
VPP - Projected Peak-Point Voltage
L - Inductance
IP/IV - Peak to Valley Current Ratio
IF - Forward Current
IR - Reverse Current
TE - Environment Temperature
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Maximal parameters |
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Average parameters |
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TE |
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Т=25°C |
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Т=25°C |
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IP |
VP |
CT |
VPP |
L |
IP/IV |
IFS |
IF |
IR |
°C |
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mА |
mV |
pF |
V |
nGn |
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mА |
mА |
mА |
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0,2 |
-600 |
< 8 |
- |
- |
- |
- |
0,05 |
2 |
85 |