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Ga - As Tunnel - Diode 3I 306 G

Ga - As Tunnel - Diode 3I 306 G

Verfügbarkeit: sofort lieferbar

2,50€

eine  Ga - As Tunnel - Diode  3I 306 G 

( 3И306Г )   aus russischer Produktion.

Die Daten:

IP      - Peak Point Current
VP     - Peak Point Voltage
CT     - Valley Point Terminal Capacitance
VPP   - Projected Peak-Point Voltage
IP/IV - Peak to Valley Current Ratio
IFS     - Forward Current Switching Mode
IFC     - Forward Current Constant Mode
IR       - Reverse Current
TE      - Environment Temperature

 

 

Maximal parameters

 

 

 

Average parameters

 

 

TE

 

 

Т=25°C

 

 

 

Т=25°C

 

 

 

IP

   VP

CT

VPP

rп.

IP/IV  

IFS

IFC

IR

°C

mV

pF

mV

Ohm

 

 

2

170

8

  850

-

8

 0.8

0.8

4

100