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Ga - As Tunnel - Diode 3I 306 S
Verfügbarkeit: 
geringe Stückzahl
geringe Stückzahl2,50€
eine Ga - As Tunnel - Diode 3I 306 S
( 3И306С ) aus russischer Produktion.
Die Daten:
IP - Peak Point Current
VP - Peak Point Voltage
CT - Valley Point Terminal Capacitance
VPP - Projected Peak-Point Voltage
IP/IV - Peak to Valley Current Ratio
IFS - Forward Current Switching Mode
IFC - Forward Current Constant Mode
IR - Reverse Current
TE - Environment Temperature
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Maximal parameters
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Average parameters
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TE |
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Т=25°C
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Т=25°C
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IP
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VP
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CT
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VPP
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rп.
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IP/IV
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IFS
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IFC
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IR
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°C
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mА
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mV
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pF
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mV
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Ohm
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mА
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mА
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mА
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9...11
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170
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10-50
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850
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-
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8
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-
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9
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20
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100
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