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Ga - As Tunnel - Diode 3I 306 R

Ga - As Tunnel - Diode 3I 306 R

Verfügbarkeit: geringe Stückzahl

2,50€

eine  Ga - As Tunnel - Diode  3I 306 R  

( 3И306Р )  aus russischer Produktion.

Die Daten:

IP       - Peak Point Current
VP      - Peak Point Voltage
CT       - Valley Point Terminal Capacitance
VPP     - Projected Peak-Point Voltage
IP/IV   - Peak to Valley Current Ratio
IFS         - Forward Current Switching Mode
IFC         - Forward Current Constant Mode
IR           - Reverse Current
TE          - Environment Temperature

 

 

Maximal parameters

 

 

 

Average parameters

 

 

TE

 

 

Т=25°C

 

 

 

Т=25°C

 

 

 

IP

   VP

CT

VPP

rп.

IP/IV  

IFS

IFC

IR

°C

mV

pF

mV

Ohm

 

 

4.5...5.5

170

4...25

  850

-

8

 6

4.5

10

100